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Datasheet 2N5932 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 2N5932   Bipolar NPN Device

2N5932 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
Seme LAB
Seme LAB
datasheet 2N5932 pdf
1 2N5932   Silicon NPN Power Transistors

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5932 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
Inchange Semiconductor
Inchange Semiconductor
datasheet 2N5932 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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