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Datasheet 2N5912 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | 2N5912 | Dual N-Channel JFET High Frequency Amplifier Dual N-Channel JFET High Frequency Amplifier
CORPORATION
2N5911 / 2N5912
FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50m |
Calogic LLC |
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4 | 2N5912 | (2N5xxx) JFET N-Channel Metal Can JFET’s
Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S &
2N5432 2N5433 2N5434 25
4.0 3.0 1.0
10.0
Part No.
w
w
2N3684 2N3686 2N3822
w
.D
BV GSS Min. (V) 50 50 50 40 35 30 30 30 25
at
h S a
(V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0
ee
9.0 4.0
U 4 t
5 5 5 VP @
.c |
Taitron Components |
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3 | 2N5912 | High Gain 2N5912 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix & National 2N5912
The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These device |
Micross |
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2 | 2N5912 | N-CHANNEL DUAL SILICON JUNCTION FET |
New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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