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Datasheet 2N5886 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | 2N5886 | COMPLEMENTARY SILICON POWER TRANSISTORS 2N5883 2N5884 PNP 2N5885 2N5886 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications.
MARKING: |
Central Semiconductor |
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10 | 2N5886 | Complementary Power Transistors 2N5884 & 2N5886
Complementary Power Transistors
General-purpose power amplifier and switching applications.
Features:
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A.
• Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A.
Pin 1. Base 2. Emitter Collector(Case)
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Multicomp |
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9 | 2N5886 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Motorola Semiconductors |
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8 | 2N5886 | Silicon Power Transistor 2N5884 (PNP) & 2N5886 (NPN) Silicon Power Transistor
High Power Audio Amplifier TO−3 Type Package
Description: The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.
Features: D Low Collector−Emitt |
NTE |
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Número de pieza | Descripción | Fabricantes | |
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