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Datasheet 2N5686 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | 2N5686 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5686
DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = 25A ·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for
robust device performance and reliable operation.
APPLICATIONS |
Inchange Semiconductor |
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5 | 2N5686 | NPN POWER SILICON TRANSISTOR 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
DEVICES
2N5685
2N5686
LEVELS
JAN JANTX JANTV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unles |
Microsemi |
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4 | 2N5686 | POWER TRANSISTORS(50A/300W) A
A
A
A
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Mospec Semiconductor |
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3 | 2N5686 | (2N5684 / 2N5686) High-Current Complementary Silicon Power Transistors
ON Semiconductort PNP
High−Current Complementary Silicon Power Transistors
. . . designed for use in high−power amplifier and switching circuit applications.
2N5684
NPN
2N5686
50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS 300 WATTS
• High Current Ca |
ON Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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