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Datasheet 2N5671 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | 2N5671 | POWER TRANSISTORS(30A/140W) A
A
A
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Mospec Semiconductor |
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5 | 2N5671 | (2N5671 / 2N5672) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5671 2N5672
DESCRIPTION ·With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial applications
PINNING PIN 1 2 3 Base Emitter Collector Fig |
SavantIC |
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4 | 2N5671 | (2N5671 / 2N5672) NPN HIGH POWER SILICON TRANSISTOR TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO V |
Microsemi |
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3 | 2N5671 | Bipolar NPN Device 2N5671
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma |
Seme LAB |
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Número de pieza | Descripción | Fabricantes | |
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