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Datasheet 2N5630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N5630 | Power Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5630/D
High-Voltage Ċ High Power Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc � |
 Motorola Semiconductors |
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| 4 | 2N5630 | COMPLEMENTARY SILICON POWER TRANSISTORS |
 Central Semiconductor Corp |
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| 3 | 2N5630 | Bipolar NPN Device 2N5630
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma |
 Seme LAB |
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| 2 | 2N5630 | (2N5629 / 2N5630) Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5629 2N5630
DESCRIPTION ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 sim |
 SavantIC |
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