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Datasheet 2N5583 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N5583 | HIGH FREQUENCY TRANSISTOR 2N5583
JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
fc
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation T/ = 25°C
Derate above 25°C
@Total |
 Motorola Semiconductors |
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| 4 | 2N5583 | PNP Silicon High Frequency Transistor 2N5583
PNP SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 |
 Advanced Semiconductor |
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| 3 | 2N5583 | Silicon Epitaxial Planar Bipolar MW NPN Transistor w
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t a
S a
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U 4 t e
m o .c
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w
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at
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m o c
|
 GAE |
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| 2 | 2N5583 | Bipolar PNP Device 2N5583
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 30V
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
1 – Emitter
Pa |
 Semelab PLC |
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