Datasheet 2N5551SC Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N5551SC	EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC	KEC

2N555 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N5551	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5401. isc Product Specification 2N5551 APPLICATIONS ·Designed for Switching and amplification in high vo	Inchange Semiconductor
2N5551	NPN General Purpose Amplifier 2N5551 / MMBT5551 — NPN General-Purpose Amplifier June 2013 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 TO-92 2 1 SOT-23 Marking: 3S 1.	Fairchild Semiconductor
2N5551	PNP General Purpose Amplifier ww.datasheet.esom www.DataSheet4U 4U.com DataSheet 4 U .com ww.datasheet.esom www.DataSheet4U 4U.com DataSheet 4 U .com www.DataS	National Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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