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Datasheet 2N5551C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2N5551C | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATIN |
KEC |
2N55 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2N5551 | Silicon NPN Power Transistor |
Inchange Semiconductor |
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2N5551 | NPN General Purpose Amplifier |
Fairchild Semiconductor |
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2N5551 | PNP General Purpose Amplifier |
National Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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