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Datasheet 2N5461 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N5461 | P-Channel JFETs P-Channel JFETs
2N/SST5460 Series
Vishay Siliconix
2N5460 2N5461 2N5462
SST5460 SST5461 SST5462
PRODUCT SUMMARY
Part Number
2N/SST5460 2N/SST5461 2N/SST5462
VGS(off) (V)
0.75 to 6 1 to 7.5 1.8 to 9
V(BR)GSS Min (V)
40 40 40
gfs Min (mS)
1 1.5 2
IDSS Min (mA)
–1 –2 –4
FEATURES
D High |
 Vishay |
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| 4 | 2N5461 | P-Channel General Purpose Amplifier 2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
Discrete POWER & Signal Technologies
2N5460 2N5461 2N5462
MMBF5460 MMBF5461
G
D G S
TO-92
D
SOT-23
Mark: 6E / 61U
S
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general purpose applications with |
 Fairchild Semiconductor |
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| 3 | 2N5461 | CASE 2904/ STYLE 7 TO92 (TO226AA) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5460/D
JFET Amplifiers
P–Channel — Depletion
3 GATE
2 DRAIN
2N5460 thru 2N5462
1 SOURCE
MAXIMUM RATINGS
Rating Drain – Gate Voltage Reverse Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C |
 Motorola Inc |
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| 2 | 2N5461 | JFET Amplifiers
2N5460, 2N5461, 2N5462 JFET Amplifier
P−Channel − Depletion
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Drain − Gate Voltage Reverse Gate − Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Te |
 ON Semiconductor |
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