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Datasheet 2N5401S Equivalent ( PDF )

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1 2N5401S   EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) MAXIMU
 KEC
KEC		 datasheet 2N5401S pdf

2N54 Datasheet ( Hoja de datos ) - resultados coincidentes

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2N5401

600mA, 150V, PNP high-voltage transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES • Low current (max. 300 mA) �
 NXP Semiconductors
NXP Semiconductors		 datasheet pdf - NXP Semiconductors
2N5454

DUAL N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER

 Intersil Corporation
Intersil Corporation		 datasheet pdf - Intersil Corporation
2N5465

(2N5460 - 2N5465) JFET Amplifiers

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Motorola Semiconductor
Motorola Semiconductor		 datasheet pdf - Motorola Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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