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Datasheet 2N5337 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5337 | Bipolar NPN Device 2N5337
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
 Seme LAB |
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| 3 | 2N5337 | NPN SILICON TRANSISTOR |
 Central Semiconductor Corp |
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| 2 | 2N5337 | Trans GP BJT NPN 80V 5A 3-Pin TO-39 Box |
 New Jersey Semiconductor |
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| 1 | 2N5337A-220M | SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE 2N5337A-220M
MECHANICAL DATA Dimensions in mm
1 0.6 0.8
4.6
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
16.5
3.6 Dia. 1 3 .5 1 0 .6
FEATURES
• HERMETIC METAL PACKAGES
1 23
1 3 .7 0
• HIGH RELIABILITY • MILITARY AND SPACE OPTIONS • SCREENING TO CECC LEVELS • FULLY ISOLATED
1. |
Seme LAB |
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