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Datasheet 2N5306 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5306 | NPN SILICON DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
Central TM
Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
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 Central Semiconductor |
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| 3 | 2N5306 | NPN Darlington Transistor 2N5306
Discrete POWER & Signal Technologies
2N5306
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO |
 Fairchild Semiconductor |
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| 2 | 2N5306 | SILICON DARLINGTON TRANSISTORS |
 ETC |
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| 1 | 2N5306A | SILICON DARLINGTON TRANSISTORS |
ETC |
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