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Datasheet 2N5246 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2N5246 | HIGH-FREQUENCY AMPLIFIER JFET MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C (Free Air)
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Lead Temperature (1/16" from Case for 10 Seconds)
Storage Temperature Range
Symbol VDG Vgs
IQ
PD
Pd
t |
Motorola Semiconductors |
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3 | 2N5246 | N-CHANNEL RF Amplifier 2N5246
2N5246
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • Sourced from process 90. TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C u |
Fairchild Semiconductor |
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2 | 2N5246 | N-Channel JFET P-Channel Power MOSFET’s
Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS(V) ID(ON)(mA) RDS(ON)( Ω) Part No. Drain-Source Min. On-State Brkdwn. Voltg. DS Current BVDSS (V) I D(ON)(A) Typ. Static DS Resistance RDS(ON) (Ω ) Package Bulk/Reel
Operati |
Taitron Components |
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1 | 2N5246 | Trans JFET N-CH 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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