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Datasheet 2N5245 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N5245 | HIGH-FREQUENCY AMPLIFIER JFET MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C (Free Air)
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Lead Temperature (1/16" from Case for 10 Seconds)
Storage Temperature Range
Symbol VDG Vgs
IQ
PD
Pd
t |
 Motorola Semiconductors |
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| 2 | 2N5245 | N-Channel RF Amplifier 2N5245
2N5245
N-Channel RF Amplifier
• This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. • Sourced from process 90. TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings* Ta=25°C u |
 Fairchild Semiconductor |
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| 1 | 2N5245 | Trans JFET N-CH 3-Pin TO-92 Bulk |
 New Jersey Semiconductor |
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