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Datasheet 2N5197 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N5197 | Monolithic N-Channel JFET Dual Siliconix
2N5196/5197/5198/5199
Monolithic NĆChannel JFET Duals
Product Summary
Part Number
2N5196 2N5197 2N5198 2N5199
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS)
-0.7 to -4
-50
1
-0.7 to -4
-50
1
-0.7 to -4
-50
1
-0.7 to -4
-50
1
IG Max (pA) -15 -15 -15 -15
jVGS1 - VGS2j Max (mV |
 TEMIC |
 |
| 4 | 2N5197 | N-Channel Dual Silicon Junction Field-Effect Transistor 8/2014
2N5196, 2N5197, 2N5198, 2N5199
N-Channel Dual Silicon Junction Field-Effect Transistor
∙ Differencial Inputs
At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (p |
 InterFET |
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| 3 | 2N5197 | Monolithic N-Channel JFET Duals 2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5196 2N5197 2N5198 2N5199
VGS(off) (V)
–0.7 to –4 –0.7 to –4 –0.7 to –4 –0.7 to –4
V(BR)GSS Min (V)
–50 –50 –50 –50
gfs Min (mS)
1 1 1 1
IG Max (pA)
–15 –15 –15 � |
 Vishay Siliconix |
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| 2 | 2N5197 | (2N5xxx) JFET N-Channel Metal Can JFET’s
Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S &
2N5432 2N5433 2N5434 25
4.0 3.0 1.0
10.0
Part No.
w
w
2N3684 2N3686 2N3822
w
.D
BV GSS Min. (V) 50 50 50 40 35 30 30 30 25
at
h S a
(V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0
ee
9.0 4.0
U 4 t
5 5 5 VP @
.c |
 Taitron Components |
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