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Datasheet 2N5172 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2N5172 | NPN General Purpose Amplifier 2N5172
2N5172
B
C
TO-92
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collect |
 Fairchild Semiconductor |
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| 2 | 2N5172 | General Purpose Si-Epitaxial Planar Transistors 2N5172
2N5172 NPN
Version 2006-05-15 Power dissipation Verlustleistung
E BC
General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
625 mW TO-92 (10D3) 0.18 g
16
Plastic case Kunststoffgehäuse
18
Weight approx. – Gewicht ca. Plastic mat |
 Diotec Semiconductor |
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| 1 | 2N5172 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2N5172
FEATURES Power dissipation
TRANSISTOR (NPN)
TO—92
1. EMITTER
DataSheet4U.com
PCM : 0.625 W (Tamb=25℃)
2. COLLECTOR
Collector current A ICM : 0.5 Collector-base voltage V(BR)CBO : 25 V Operating and storage ju |
 TRANSYS Electronics |
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