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Datasheet 2N5108 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N5108 | HIGH FREQUENCY TRANSISTOR 2N5108
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Tq = 25°C Derate above 25°C
Storage Temperature
Symbol vCEO VCER v CBO v EBO
•c
PD
Tstg
Value |
 Motorola Semiconductors |
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| 3 | 2N5108 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5108
DESCRIPTION ·High Current-Gain Bandwidth Product
: fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE
APPLICATIONS ·Designed for general purpose Class C amplifier applica |
 INCHANGE |
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| 2 | 2N5108 | NPN SILICON HIGH FREQUENCY TRANSISTOR 2N5108
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.
PACKAGE STYLE TO-39 FEATURES:
• GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package
MAXIMUM RATINGS
IC VC |
 Advanced Semiconductor |
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| 1 | 2N5108 | Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 |
 New Jersey Semiconductor |
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