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Datasheet 2N4123 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | 2N4123 | GENERAL PURPOSE TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
2N4123 2N4124
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4123 2N4124
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device |
Motorola Semiconductors |
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6 | 2N4123 | SILICON TRANSISTORS 2N4123 2N4124 NPN 2N4125 2N4126 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplif |
Central Semiconductor |
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5 | 2N4123 | General Purpose Transistors(NPN Silicon) 2N4123, 2N4124 General Purpose Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 2 BASE 1 EMITTER
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage Collector Current − C |
ON Semiconductor |
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4 | 2N4123 | NPN EPITAXIAL SILICON TRANSISTOR |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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