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Datasheet 2N4032 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2N4032 | Bipolar PNP Device 2N4032
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
 Seme LAB |
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| 8 | 2N4032 | PNP SILICON PLANAR TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031 2N4032, 2N4033
TO-39 Metal Can Package
2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless s |
 CDIL |
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| 7 | 2N4032 | Power Transistor Power Transistor
Description:
A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range.
Pin Configurations: 1. Emit |
 Multicomp |
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| 6 | 2N4032 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
2N4026/28 2N4027/29 Symbol 2N4030/32 2N4031/33
Unit
Collector-Emitter Voltage) 1)
VCEO
60
80 Vdc
Collector-Base Voltage
VCBO
60
80 Vdc
Emitter-Base Voltage
VEBO
5.0
5.0 Vdc
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
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 Motorola Semiconductors |
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