Datasheet 2N3012CSM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2N3012CSM	Bipolar PNP Device Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) m o .c U 4 t e e h S a at .D w w w 0.31 rad. (0.012) 2N3012CSM 3 2 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 1 – Base Parameter VCEO* IC(CONT) hFE ft Test Conditions @ 0.5/30m (VCE / IC)	Seme LAB

2N3012 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2N3012	Bipolar PNP Device Dimensions in mm (inches). m o .c U 4 t e e h S a at .D w w w 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N3012 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 1 – Emitter Parameter VCEO* IC(CONT)	Seme LAB
2N3012CSM	Bipolar PNP Device Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) m o .c U 4 t e e h S a at .D w w w 0.31 rad. (0.012) 2N3012CSM 3 2 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 1 – Base Parameter VCEO* IC(CONT) hFE ft Test Conditions	Seme LAB
2N3012	SWITCHING TRANSISTOR 2N3012 CASE 22-03, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR PNP SILICON Refer to 2N869A for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate abo	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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