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Datasheet 2N1613 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2N1613 | SILICON NPN TRANSISTOR 2N1613
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless ot |
 Central Semiconductor |
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| 11 | 2N1613 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(RBE * 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (a Tq = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Ra |
 Motorola Semiconductors |
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| 10 | 2N1613 | Bipolar NPN Device 2N1613
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
 Seme LAB |
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| 9 | 2N1613 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N1613
TO-39 Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage (RBE<10Ω) VCER
Collec |
 CDIL |
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