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Datasheet 20N50C1 Equivalent ( PDF )

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1 20N50C1   HGTH20N50C1

HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fa
 Intersil Corporation
Intersil Corporation		 datasheet 20N50C1 pdf

20N5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
20N50

FDP20N50

FDP20N50 500V N-Channel MOSFET May 2006 FDP20N50 500V N-Channel MOSFET Features • 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt
Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
20N50

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N50 20A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc. The UTC
 Unisonic Technologies
Unisonic Technologies		 datasheet pdf - Unisonic Technologies
20N50

N-Channel MOSFETS

N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no
 OGFD
OGFD		 datasheet pdf - OGFD


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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