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Datasheet 1SS190 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | 1SS190 | Switching Diodes 1. N.C 2. CATHODE 3. ANODE
Features
Low forward voltage
: VF(3)=0.92V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: E3
Maximum Ratings @TA=25℃
Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Pow |
LGE |
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5 | 1SS190 | SWITCHING DIODE RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS190
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF: 100 mA
* Reverse voltage VR: 80 V
* Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* |
RECTRON |
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4 | 1SS190 | SWITCHING DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS190
Switching Diode
FEATURES y Low forward voltage y Fast reverse recovery time
MARKING: E3
E3
SOT-23
1 3
2
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forw |
JCET |
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3 | 1SS190 | DIODE RoHS
1SS190 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Reverse Voltage
VR : 80V
OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC
1
1.
2.4 1.3
SOT-23
3
2
ONIC CMarking:E3
2.9 |
WEJ |
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Número de pieza | Descripción | Fabricantes | |
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