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Datasheet 1S18 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 27 | 1S18 | Diode ( Rectifier ) |
 American Microsemiconductor |
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| 26 | 1S1829 | AXIAL LEADED SILICON RECTIFIER DIODES 1S1829
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 400V CURRENT: 1.0 A
Features
! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5 ! Terminals: Plated Leads Solderable per
MIL-STD-202 |
 SUNMATE |
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| 25 | 1S1829 | Silicon Diffused Type Rectifier TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
1S1829,1S1886
GENERAL PURPOSE RECTIFIER APPLICATIONS
1S1829,1S1886
Unit: mm
l Average Forward Current l Repetitive Peak Reverse Voltage l Plastic Mold Package
: IF (AV) = 1.0A (Ta = 65°C) : VRRM = 200, 800V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Re |
 Toshiba Semiconductor |
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| 24 | 1S1830 | AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 1000V CURRENT: 1.0 A
Features
! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5 ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weigh |
SUNMATE |
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