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Datasheet 1N415E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | 1N415E | SILICON MIXER DIODE 1N415E
SILICON MIXER DIODE
DESCRIPTION:
The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
• High burnout resistance • Low noise figure • Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 20 mA 1.0 |
Advanced Semiconductor |
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2 | 1N415E | (1N41xx) X Band Point Contact Mixer Diodes Point Contact Diodes
Point Contact Diodes: 1N Series
S - X Band Point Contact Mixer Diodes
Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed for low n |
ETC |
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1 | 1N415E | Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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