Datasheet 1N3595-M Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	1N3595-M	DIODE Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 1 µs Max. Power Dissipation (PT) at TA = 25° C Max. Thermal Resistance (Rth J-A) Max. Junction Tempe	DSI

1N359 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
1N3595	Low Leakage Diode Low Leakage Diode Applications Features 1N3595 DO-35 Glass Package Used in instrumentation applications, where low leakage and high voltage isolation are important. DO-35 Glass Package (nominal dimensions) Six sigma quality Metallurgically bonded glass 0.020" 0.50 mm BKC's	Microsemi Corporation
1N3593	Diode (spec sheet)	American Microsemiconductor
1N3595	SILICON LOW LEAKAGE DIODE 1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: (TA=25	Central Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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