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Datasheet 1N3595 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 1N3595 | SILICON LOW LEAKAGE DIODE 1N3595 SILICON LOW LEAKAGE DIODE
JEDEC DO-35 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
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 Central Semiconductor |
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| 7 | 1N3595 | Small Signal Diode Absolute Maximum Ratings 1N3595
1N3595
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM
TA = 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second |
 Fairchild Semiconductor |
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| 6 | 1N3595 | Low Leakage Diode Low Leakage Diode
Applications Features
1N3595
DO-35 Glass Package
Used in instrumentation applications, where low leakage and high voltage isolation are important.
DO-35 Glass Package
(nominal dimensions) Six sigma quality Metallurgically bonded glass 0.020" 0.50 mm BKC's Sigma Bond™ platin |
 Microsemi Corporation |
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| 5 | 1N3595 | Diode Switching 150V 0.225A 2-Pin DO-35 |
 New Jersey Semiconductor |
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