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Datasheet 15N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 15N60   N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max) ·High Switching Speed ·APPLICATIONS ·Switching regulators isc Product Specification 15N60 ·AB
Inchange Semiconductor
Inchange Semiconductor
datasheet 15N60 pdf
3 15N60   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 15N60 15 Amps, 600 Volts N-CHANNEL MOSFET „ DESCRIPTION Preliminary Power MOSFET The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
Unisonic Technologies
Unisonic Technologies
datasheet 15N60 pdf
2 15N60C3   SPP15N60C3

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved trans
Infineon
Infineon
datasheet 15N60C3 pdf
1 15N60HS   High Speed IGBT

SGB15N60HS ^ High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temper
Infineon
Infineon
datasheet 15N60HS pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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