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Datasheet 13N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 13N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 13N50
Preliminary Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
1
TO-220
The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching |
 Unisonic Technologies |
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| 4 | 13N50C | FQB13N50C
FQB13N50C/FQI13N50C
QFET
FQB13N50C/FQI13N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail |
 Fairchild Semiconductor |
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| 3 | 13N50CF | FQPF13N50CF FQPF13N50CF — N-Channel QFET® FRFET® MOSFET
June 2014
FQPF13N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 13 A, 540 mΩ
Features
• 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
• Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Rec |
Fairchild Semiconductor |
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| 2 | 13N50H | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
13Amps，500V N-CHANNEL MOSFET
13N50H
1.Description
The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,elec |
 KIA |
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