Datasheet 13N10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	13N10	FQB13N10 FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Fairchild Semiconductor

13 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
13001	NPN Epitaxial Silicon Transistor 13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collect	Elite
13003	NPN Epitaxial Silicon Transistor 13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C	Elite Enterprises
13007	NPN Epitaxial Silicon Transistor 13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-	Elite

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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