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Datasheet 13N10 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 13N10   FQB13N10

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
Fairchild Semiconductor
Fairchild Semiconductor
datasheet 13N10 pdf

13 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
13001

NPN Epitaxial Silicon Transistor

13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collect
Elite
Elite
datasheet pdf - Elite
13003

NPN Epitaxial Silicon Transistor

13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C
Elite Enterprises
Elite Enterprises
datasheet pdf - Elite Enterprises
13005A

NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR ¶ÔÓ¦¹úÍâкŠ3DD13005A ¹ãÖݽðÓÀ ûµç× ÐÏÞ «Ë¾ A1 ¨€ ¸ßѹ¿ìËÙªØ 13005A ¨€ ÍâÐÎ ¼ °Òý½Å Á Ö÷ÒªÓÃ; ¨€ ¼«ÏÞÖµ £¨ Ta=25¡æ£© ¡-¡¡-¡-¡¡-¡-¡-¡-¡£¨ Tc=25¡æ£© µçÑ
ETC
ETC
datasheet pdf - ETC


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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