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Datasheet 13007 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 13007 | NPN Epitaxial Silicon Transistor 13007 NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect |
 Elite |
 |
| 3 | 13007A | MJE13007A A
A
A
A
|
 Mospec Semiconductor |
|
| 2 | 13007B | TS13007B TS13007B
High Voltage NPN Transistor
TO-220
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A
Features
● ● High Voltage High Speed Switching
Block Diagram
Structure
● ● Silicon Triple Diffused Type NPN Silicon Tran |
 TSC |
|
| 1 | 13007N | ST13007N ®
ST13007N ST13007NFP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
s s s s
s
HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWI |
 STMicroelectronics |
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