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Datasheet 13003 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | 13003 | NPN Epitaxial Silicon Transistor 13003 NPN Epitaxial Silicon Transistor
TO-220
HIGH VOLTAGE SWITCHING APPLICATIONS
Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Col |
 Elite Enterprises |
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| 12 | 13003 | HIGH VOLTAGE AND HIGH SPEED SWITCH 13003
STANDARD
· ·
65
HSiN
13003
PEFORMANCE CURVES
1
Ic(A)
SOA (DC)
120 100
%
Pc
Tj
0.1
80
IS/B
60
Ptot
0.01
40 20
0.001 1
hFE
10
100
Vce(V)
0
1000
0
50
100
150
Tj(
) 200
hFE - Ic
100
100
hFE
hFE - Ic
Tj=125 Tj=25
Tj=125
Tj=25
10
Tj= − 40
10
Tj= − 40
Vce= |
 HSiN |
|
| 11 | 13003ADA | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
13003ADA
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base b |
 Unisonic Technologies |
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| 10 | 13003ADG | NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
13003ADG
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applicatio |
Unisonic Technologies |
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