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Datasheet 12N50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 12N50 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
12N50
·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·A |
Inchange Semiconductor |
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3 | 12N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N50
Preliminary Power MOSFET
12 Amps, 500 Volts N-CHANNEL POWER MOSFET
1
DESCRIPTION
TO-220
The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a |
Unisonic Technologies |
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2 | 12N50FT | FDPF12N50FT FDP12N50F / FDPF12N50FT N-Channel MOSFET
December 2007
UniFETTM
FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω Features
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improv |
Fairchild Semiconductor |
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1 | 12N50K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 12N50K-MT
12A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superi |
Unisonic Technologies |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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