Datasheet 11N80C3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	11N80C3	SPP11N80C3 SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.45 11	Infineon

11N8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
11N80C3	SPP11N80C3 SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(o	Infineon
11N80	11A 812V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary Power MOSFET 11A, 812V N-CHANNEL POWER MOSFET  DESCRIPTION 1 TO-3P The UTC 11N80 is an N-C hannel power MOSFET, it uses UTC’s advanced technology to pr ovide customers with a mi nimum on-state resistance, low gate charge and	UNISONIC TECHNOLOGIES

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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