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Datasheet 10N70 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | 10N70 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
10N70
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 700V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive R |
 Inchange Semiconductor |
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| 7 | 10N70 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N70
10A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact |
 Unisonic Technologies |
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| 6 | 10N70-C | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N70-C
10A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche cha |
Unisonic Technologies |
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| 5 | 10N70-Q | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
10N70-Q
Preliminary
10A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg |
Unisonic Technologies |
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