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Datasheet 10N65 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
13 10N65   N-CHANNEL MOSFET

10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N65 ITO-220AB 10N65F TO-263 10N65B TO-262 10N65H Absolute Maximum Ratings(TC=2
CHONGQING PINGYANG
CHONGQING PINGYANG
datasheet 10N65 pdf
12 10N65   N-CHANNEL MOSFET

10N65 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 主要参数 MAIN CHARACTERISTICS 封装 Package ID 9.5 A VDSS 650 V Rdson(@Vgs=10V) 0.95Ω Qg 34 nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic
LONG-SEMI
LONG-SEMI
datasheet 10N65 pdf
11 10N65   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N65 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characterist
Unisonic Technologies
Unisonic Technologies
datasheet 10N65 pdf
10 10N65-C   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged av
Unisonic Technologies
Unisonic Technologies
datasheet 10N65-C pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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