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Datasheet 10N60F Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 10N60F   N-CHANNEL MOSFET

10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute Maximum Ratings(TC=2
 CHONGQING PINGYANG
CHONGQING PINGYANG		 datasheet 10N60F pdf

10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
10N60C

FQP10N60C

FQP10N60C/FQPF10N60C QFET FQP10N60C/FQPF10N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology ha
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
10N20C

FQP10N20C

FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology ha
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
10NM60N

STD10NM60N

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features Order codes STD10NM60N STF10NM60N STP10NM60N STU10NM60N ■ ■ ■ VDSS @TJmax RDS(on) max. ID Pw 70 W 1 3 2 1 3 2 650 V < 0.55 Ω
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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