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Datasheet 10N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
15 | 10N60 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
10N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (10A, 600Volts)
DESCRIPTION
The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thr |
nELL |
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14 | 10N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
10N60
·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive |
Inchange Semiconductor |
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13 | 10N60 | N-CHANNEL MOSFET 10N60(F,B,H)
10A mps,600 Volts N-CHANNEL MOSFET
FEATURE
10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 10N60
ITO-220AB 10N60F
TO-263 10N60B
TO-262 10N60H
Absolute Maximum Ratings(TC=2 |
CHONGQING PINGYANG |
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12 | 10N60 | 600/650 Volts N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
10N60
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state res |
Unisonic Technologies |
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Número de pieza | Descripción | Fabricantes | |
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