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Datasheet 100N055 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 100N055   IXUC100N055

www.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID25 = 100 A RDS(on) = 7.7 mW ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from ca
IXYS Corporation
IXYS Corporation
datasheet 100N055 pdf

100N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
100N03L

STD100N03L

STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED
STMicroelectronics
STMicroelectronics
datasheet pdf - STMicroelectronics
100N055

IXUC100N055

Datasheet.es ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID25 = 100 A RDS(on) = 7.7 mW ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm
IXYS Corporation
IXYS Corporation
datasheet pdf - IXYS Corporation
100NDD

Diode-Diode Modules

Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package 100ND
Naina Semiconductor
Naina Semiconductor
datasheet pdf - Naina Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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