Datasheet 08N50E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	08N50E	FMP08N50E FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI PO	Fuji Electric

08N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
08N80C3	SPP08N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low e	Infineon Technologies
08N50E	FMP08N50E FMP08N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche	Fuji Electric
08N60	N-Channel Enhancement Mode Field Effect Transistor Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 600V 8A 0.89 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.	SamHop Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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