Datasheet 06N03LA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	06N03LA	IPB06N03LA IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C	Infineon Technologies Corporation

06N0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
06N03LA	IPB06N03LA IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal res	Infineon Technologies Corporation
06N03	25V N-Channel Enhancement Mode MOSFET PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and M	Pan Jit International
06N02C	N-Channel Enhancement Mode Power MOSFET FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Powe	FNK

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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