Q1NC45R-AP Datasheet ( Hoja de datos ) - DataSheet.es

Q1NC45R-AP Datasheet ( Hoja de datos )


Q1NC45R-AP Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 Q1NC45R-AP  Q1NC45R-AP Hoja de datos PDF - STMicroelectronics

STQ1NC45R-AP


STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET General features Type STD2NC45-1 STQ1NC45R-AP ■ ■ ■ ■ VDSS 450V 450V RDS(on) <4.5Ω <4.5Ω ID 1.5A 0.5A Pw 30W 3.1W 3 2 1 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK TO-92 (ammopak) Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based P
STMicroelectronics
STMicroelectronics
PDF


Q1NC45R-A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
Q1NC45R-AP  Q1NC45R-AP Hoja de datos - STMicroelectronics STQ1NC45R-AP

STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET General features Type STD2NC45-1 STQ1NC45R-AP ■ ■ ■ ■ VDSS 450V 450V RDS(on) <4.5Ω <4.5Ω ID 1.5A 0.5A Pw 30W 3.1W 3 2 1 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK TO-92 (ammopak) Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based P
STMicroelectronics
STMicroelectronics
PDF




Enlace url :
[1] 

nuevas actualizaciones
[ 10N80 ]   [ 16F120 ]   [ 182T2B ]   [ 182T2C ]   [ 183T2B ]   [ 183T2C ]   [ 184T2B ]   [ 184T2C ]   [ 185T2B ]   [ 185T2C ]   [ 1EBN1001AE ]   [ 1N3941B ]   [ 1N3941G ]   [ 1N3941G-M ]   [ 1N3942 ]   [ 1N3942-M ]   [ 1N3942B ]   [ 1N3942G ]   [ 1N3942G-M ]   [ 1N3997A ]   [ 1N3997A-SEL ]   [ 1N3997RA ]   [ 1N5617 ]  

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z




www.DataSheet.es    |  2017    |  Contacto   |   English