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Q1NC45 Hoja de datos ( Datasheet )


Q1NC45 Datasheet ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 Q1NC45   STQ1NC45

STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 s s s s s VDSS 450 V 450 V RDS(on) < 4.5 Ω < 4.5 Ω ID 1.5 A 0.5 A Pw 30 W 3.1 W 3 2 1 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK IPAK TO-92 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability
STMicroelectronics
STMicroelectronics
datasheet Q1NC45 pdf
1 Q1NC45R-AP   STQ1NC45R-AP

STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET General features Type STD2NC45-1 STQ1NC45R-AP ■ ■ ■ ■ VDSS 450V 450V RDS(on) <4.5Ω <4.5Ω ID 1.5A 0.5A Pw 30W 3.1W 3 2 1 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK TO-92 (ammopak) Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most
STMicroelectronics
STMicroelectronics
datasheet Q1NC45R-AP pdf


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