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P9NC60FP Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 P9NC60FP    STP9NC60FP

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A STP9NC60 STP9NC60FP ν ν ν ν ν TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggednes
STMicroelectronics
STMicroelectronics
datasheet P9NC60FP pdf

P9NC6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P9NC60FP

STP9NC60FP

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A STP9NC60 STP9NC60FP ν ν ν ν ν TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPAB
STMicroelectronics
STMicroelectronics
datasheet P9NC60FP pdf
P9NC60

STP9NC60

N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP9NC60 STP9NC60FP s s s s s STP9NC60 STP9NC60FP VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AV
ST Microelectronics
ST Microelectronics
datasheet P9NC60 pdf
P9NC65FP

STP9NC65FP

N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP9NC65 STP9NC65FP s s s s s STP9NC65 STP9NC65FP VDSS 650 V 650 V RDS(on) < 0.90 Ω < 0.90 Ω ID 8A 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE T
ST Microelectronics
ST Microelectronics
datasheet P9NC65FP pdf


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