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P60N03LDG Datasheet ( Hoja de datos )

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1 P60N03LDG   N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P60N03LDG TO-252 (DPAK) Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12.8m ID 60A D G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VGS ID IDM IAR EAS EAR PD
NIKO-SEM
NIKO-SEM
datasheet P60N03LDG pdf

P60N03 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P60N03L

EQP60N03L

FQP60N03L May 2001 QFET FQP60N03L 30V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P60N03L pdf
P60N03LDG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P60N03LDG TO-252 (DPAK) Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12.8m ID 60A D G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CO
NIKO-SEM
NIKO-SEM
datasheet P60N03LDG pdf


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