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P55NF06 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
3 P55NF06   STP55NF06

STB55NF06, STP55NF06, STP55NF06FP N-channel 60 V, 0.015 Ω, 50 A STripFET™ II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet — production data Features Order code STB55NF06 STP55NF06 STP55NF06FP VDSS RDS(on) max. ID 60 V < 0.018 Ω 50 A 50 A (1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value ■ 100% avalanche tested ■ Exceptional dv/dt capability Applications ■ Switching application Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This render
ST Microelectronics
ST Microelectronics
datasheet P55NF06 pdf
2 P55NF06   N-CHANNEL POWER MOSFET TRANSISTOR

55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. 12 3 TO-220/TO-220F „ FEATURES 12 3 TO-252/DPAK * RDS(ON) = 23mȍ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF )
Thinki Semiconductor
Thinki Semiconductor
datasheet P55NF06 pdf
1 P55NF06L   STP55NF06L

STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET™ II Power MOSFET General features Type STP55NF06L STB55NF06L STB55NF06L-1 VDSS 60V 60V 60V RDS(on) <0.018Ω <0.018Ω <0.018Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 55A 55A 55A Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka
STMicroelectronics
STMicroelectronics
datasheet P55NF06L pdf


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