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P4NB80FP Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 P4NB80FP   STP4NB80FP

® STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP4NB80 STP4NB80FP s s s s s V DSS 800 V 800 V R DS(on) 3.3 Ω 3.3 Ω ID 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an
STMicroelectronics
STMicroelectronics
datasheet P4NB80FP pdf

P4NB8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P4NB80FP

STP4NB80FP

® STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP4NB80 STP4NB80FP s s s s s V DSS 800 V 800 V R DS(on) 3.3 Ω 3.3 Ω ID 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
STMicroelectronics
STMicroelectronics
datasheet P4NB80FP pdf
P4NB80

STP4NB80

® STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP4NB80 STP4NB80FP s s s s s V DSS 800 V 800 V R DS(on) 3.3 Ω 3.3 Ω ID 4A 4A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
STMicroelectronics
STMicroelectronics
datasheet P4NB80 pdf


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