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P4N60 Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 P4N60   SSP4N60

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re
Fairchild Semiconductor
Fairchild Semiconductor
datasheet P4N60 pdf

P4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P4NK60ZFP

STP4NK60ZFP

STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 and TO-220FP packages Datasheet - production data Features TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP
ST Microelectronics
ST Microelectronics
datasheet P4NK60ZFP pdf
P45N02LDG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m£[ ID 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIO
Niko-Sem
Niko-Sem
datasheet P45N02LDG pdf
P4NC60FP

STP4NC60FP

STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 s s s s s VDSS 600V 600V 600V RDS(on) < 2.2Ω < 2.2Ω < 2.2Ω ID 4.2A 4.2A 4.2A 3 1 2 TYPICAL RDS(on) = 1.8
ST Microelectronics
ST Microelectronics
datasheet P4NC60FP pdf
P4NA60FI

STP4NA60FI

STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA60 STP4NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 2.2 Ω < 2.2 Ω ID 4.3 A 2.7 A TYPICAL RDS(on) = 1.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE
STMicroelectronics
STMicroelectronics
datasheet P4NA60FI pdf
P45N02LD

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20mΩ ID 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Sour
Niko-Sem
Niko-Sem
datasheet P45N02LD pdf
P40NF03L

STP40NF03L

® STP40NF03L N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET™ POWER MOSFET TYPE STP40NF03L s V DSS 30 V R DS(o n) < 0.022 Ω ID 40 A s TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMi
ST Microelectronics
ST Microelectronics
datasheet P40NF03L pdf
P4NK60Z

STP4NK60Z

STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 and TO-220FP packages Datasheet - production data Features TAB 3 2 1 TO-220 3 2 1 TO-220FP Order codes VDS RDS(on) max. PTOT STP4NK60Z 600 V 2 Ω 70 W STP4NK60ZFP
STMicroelectronics
STMicroelectronics
datasheet P4NK60Z pdf
P421

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Bulletin I2776 rev. E 04/99 P400 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simpli
International Rectifier
International Rectifier
datasheet P421 pdf


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