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P3NB90FP Datasheet ( Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 P3NB90FP    STP3NB90FP

s s s s s w w a D . w S a t e e h U 4 t m o .c STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W TYPE VDSS 900 V 900 V STP3NB90 STP3NB90FP TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 1 2 TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s propr
ST Microelectronics
ST Microelectronics
datasheet P3NB90FP pdf

P3NB9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P3NB90FP

STP3NB90FP

s s s s s w w a D . w S a t e e h U 4 t m o .c STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W TYPE VDSS 900 V 900 V STP3NB90 STP3NB90FP TYPICAL RDS(on
ST Microelectronics
ST Microelectronics
datasheet P3NB90FP pdf


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